EGP20K Datasheet | onsemi

Features - Glass- Passivated Cavity- Free Junction - High Surge Current Capability - Low Leakage Current - Super- Fast Recovery Time for High Efficiency - Low Forward Voltage, High Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IF(AV) Average Rectified Current 0.375 inch lead length at TA = 55C IFSM Peak Forward Surge Current 8.3 ms single half- sine- wave Superimposed on rated load (JEDEC method) TJ, TSTG Junction and Storage Temperature Range - 65 to 150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Total Device Dissipation Derate above 25C Rq JA Rq JL Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead AXIAL LEAD DO 204 CASE 017AJ MARKING DIAGRAM EGP20X...