EMC2DXV5T1 Datasheet | onsemi

.. EMC2DXV5T1, EMC5DXV5T1 Preferred Devices Dual mon Base- Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base- emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual ponents by integrating them into a single device. In the EMC5DXV5T1 series, two plementary BRT devices are housed in the SOT- 553 package which is ideal for low power surface mount applications where board space is at a premium. - Simplifies Circuit Design - Reduces Board Space - Reduces ponent Count - Available in 8 mm, 7 inch Tape and Reel - Lead Free MAXIMUM RATINGS (TA = 25°C unless otherwise noted, mon for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc m Adc xx = Specific Device Code D = Date Code http://onsemi. 3 R1 2 R2 1 R2 Q1 R1 4 Q2 5 1 SOT- 553 CASE 463B MARKING DIAGRAM 5 xx D 1 ORDERING INFORMATION Device EMC2DXV5T1 Package SOT- 553 SOT- 553 SOT- 553 SOT- 553 Shipping† 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Junction and Storage Temperature 1. FR- 4 @ Minimum Pad Symbol PD 357 (Note 1) 2.9 (Note 1) Rq JA 350 (Note 1) m W m W/°C °C/W Max Unit EMC2DXV5T5 EMC5DXV5T1 EMC5DXV5T5 Symbol PD Max 500 (Note 1) 4.0 (Note 1) Unit m W m W/°C °C/W °C †For information on tape and reel specifications,...