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EMH2407 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • Best suited for LiB charging and discharging switch.
  • Common-drain type.
  • 2.5V drive.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on cer.

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Datasheet Details

Part number EMH2407
Manufacturer onsemi
File Size 460.59 KB
Description N-Channel Power MOSFET
Datasheet download datasheet EMH2407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1141D EMH2407 N-Channel Power MOSFET 20V, 6A, 25mΩ, Dual EMH8 http://onsemi.com Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 20 ±12 6 40 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device.