EMT2DXV6T5 Datasheet | onsemi

EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT- 563 which is designed for low power surface mount applications. http://onsemi. (3) (2) (1) - Lead- Free Solder Plating - Low VCE(SAT), < 0.5 V MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value - 60 - 50 - 6.0 - 100 Unit V V V m Adc Q2 Q1 (4) (5) (6) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR- 4 @ Minimum Pad. Rq JA TJ, Tstg TA = 25°C Rq JA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit m W m W/°C °C/W 54 3 12 MARKING DIAGRAM 3M D SOT- 563 CASE 463A Style 2 3M = Specific Device Code D = Date Code Symbol PD Unit m W m W/°C °C/W °C ORDERING INFORMATION Device EMT2DXV6T5 Package SOT- 563 Shipping† 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. .. © Semiconductor ponents Industries, LLC, 2004 April, 2004 - Rev. 0 Publication Order Number: EMT2DXV6T5/D ELECTRICAL CHARACTERISTICS (TA =...