EMX1DXV6T1 Description
EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.
EMX1DXV6T1 Key Features
- Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal
- Junction-to-Ambient Junction and Storage Temperature Range Symbol PD 357 (Note 1) 2.9 (Note 1) RqJA 350 (Note 1) mW mW/°
- Rev. 1
- hFE 120 fT COB
- 180 2.0 560
- MHz pF
- Min 60 50 7.0
- 0.5 0.5 Unit Vdc Vdc Vdc mA mA Vdc