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ESD11N5.0ST5G - ESD Protection Diodes

Download the ESD11N5.0ST5G datasheet PDF. This datasheet also covers the ESD11N50ST5G variant, as both devices belong to the same esd protection diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

of survivability specs.

Rev.

Key Features

  • Low Capacitance 0.6 pF.
  • Low Clamping Voltage.
  • Small Body Outline Dimensions: 0.60 mm x 0.30 mm.
  • Low Body Height: 0.3 mm.
  • Stand.
  • off Voltage: 5.0 V.
  • Low Leakage.
  • Response Time is < 1 ns.
  • IEC61000.
  • 4.
  • 2 Level 4 ESD Protection.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ESD11N50ST5G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESD11N5.0ST5G ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. Specification Features • Low Capacitance 0.6 pF • Low Clamping Voltage • Small Body Outline Dimensions: 0.60 mm x 0.30 mm • Low Body Height: 0.3 mm • Stand−off Voltage: 5.