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ESD9R3.3S Datasheet

Manufacturer: onsemi
ESD9R3.3S datasheet preview

Datasheet Details

Part number ESD9R3.3S
Datasheet ESD9R3.3S-ONSemiconductor.pdf
File Size 213.23 KB
Manufacturer onsemi
Description ESD Protection Diode
ESD9R3.3S page 2 ESD9R3.3S page 3

ESD9R3.3S Overview

 Semiconductor ponents Industries, LLC, 2013 1 February, 2024 − Rev. 3 Publication Order Number: ESD9R3.3S/D ESD9R3.3S, SZESD9R3.3S (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @.

ESD9R3.3S Key Features

  • Ultra-Low Leakage < 1 nA
  • Ultra-Low Capacitance 0.5 pF
  • Low Clamping Voltage
  • Small Body Outline Dimensions
  • Low Body Height: 0.016- (0.4 mm)
  • Stand-off Voltage: 3.3 V
  • Response Time < 1.0 ns
  • IEC61000-4-2 Level 4 ESD Protection
  • SZ Prefix for Automotive and Other
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