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NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts
P–Channel SOT–223
Features
• • • •
Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified
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Typical Applications
–6.0 AMPERES –20 VOLTS RDS(on) = 44 mW (Typ.)
P–Channel D
• Power Management in Portables and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Gate–to–Source Voltage Drain Current (Note 1) – Continuous @ TA = 25°C – Continuous @ TA = 70°C – Single Pulse (tp = 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –5.
F6P02T3 Datasheet
