FCA76N60N - N-Channel SupreMOS MOSFET

onsemi

General Description

The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Key Features

RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A.
Ultra Low Gate Charge (Typ. Qg = 218 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 914 pF).
100% Avalanche Tested.
RoHS Compliant.

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FCA76N60N n-channel supremos mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCA76N60N
Manufacturer	onsemi
File Size	3.98 MB
Description	N-Channel SupreMOS MOSFET
Datasheet	FCA76N60N Datasheet

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FCA76N60N — N-Channel SupreMOS® MOSFET FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Sept 2017 Features • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.