Datasheet4U Logo Datasheet4U.com

FCB199N65S3 - MOSFET

Datasheet Summary

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 170 mW.
  • Ultra Low Gate Charge (Typ. Qg = 30 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 277 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCB199N65S3

📁 Similar Datasheet

  • FCB199N65S3 - N-Channel MOSFET (INCHANGE)
  • FCB110N65F - MOSFET (Fairchild Semiconductor)
  • FCB110N65F - N-Channel MOSFET (INCHANGE)
  • FCB11N60 - N-Channel MOSFET (Fairchild Semiconductor)
  • FCB11N60F - N-Channel MOSFET (Fairchild Semiconductor)
  • FCB-MA130 - USB 3.0 Interface (InterTest)
  • FCB-MA130 - 13 Mega Pixels Digital Camera Module (Sony)
  • FCB20N60 - N-Channel MOSFET (Fairchild Semiconductor)
  • FCB20N60F - N-Channel MOSFET (Fairchild Semiconductor)
  • FCB20N60_F085 - MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FCB199N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 14 A, 199 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 170 mW • Ultra Low Gate Charge (Typ. Qg = 30 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
Published: |