FCH023N65S3 Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 mW
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant
| Part Number | Description |
|---|---|
| FCH040N65S3 | N-Channel MOSFET |
| FCH041N60E | N-Channel MOSFET |
| FCH041N60F | N-Channel MOSFET |
| FCH041N60F-F085 | N-Channel MOSFET |
| FCH041N65EFLN4 | N-Channel MOSFET |