FCH072N60F - N-Channel MOSFET

onsemi

General Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 65 mW.
Ultra Low Gate Charge (Typ. Qg = 165 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 441 pF).
100% Avalanche Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FCH072N60F n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCH072N60F
Manufacturer	onsemi
File Size	335.30 KB
Description	N-Channel MOSFET
Datasheet	FCH072N60F Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, SUPERFET) II, FRFET) 600 V, 52 A, 72 mW FCH072N60F Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • 650 V @ TJ = 150°C • Typ.