FCH130N60 - N-Channel MOSFET

onsemi

General Description

SUPERFET® II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 112 mW.
Ultra Low Gate Charge (Typ. Qg = 54 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 240 pF).
100% Avalanche Tested.
This Device is Pb.
Free and is RoHS Compliant.

📥 Download Datasheet

FCH130N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCH130N60
Manufacturer	onsemi
File Size	361.14 KB
Description	N-Channel MOSFET
Datasheet	FCH130N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FCH130N60	MOSFET	Fairchild Semiconductor
FCH130N60	N-Channel MOSFET	INCHANGE
FCH104N60	N-Channel MOSFET	Fairchild Semiconductor
FCH104N60	N-Channel MOSFET	INCHANGE
FCH104N60F	MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FCH104N60F	N-Channel MOSFET
FCH104N60F-F085	N-Channel MOSFET
FCH110N65F	N-Channel MOSFET
FCH125N60E	N-Channel MOSFET
FCH125N65S3R0	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, SUPERFET II 600 V, 28 A, 130 mW FCH130N60 Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mW • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.