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FCH165N65S3R0 - N-Channel MOSFET

General Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 140 mW.
  • Ultra Low Gate Charge (Typ. Qg = 39 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 341 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription for FCH165N65S3R0 (Reference)

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FCH165N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-j...

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PERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 140 mW • Ultra Low Gate Charge (Typ. Qg = 39 nC) • Low Effective Output Capacitance (Typ. Coss(eff.

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