Datasheet4U Logo Datasheet4U.com

FCH165N65S3R0 - N-Channel MOSFET

Datasheet Summary

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 140 mW.
  • Ultra Low Gate Charge (Typ. Qg = 39 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 341 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Datasheet preview – FCH165N65S3R0

Datasheet Details

Part number FCH165N65S3R0
Manufacturer ON Semiconductor
File Size 430.12 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH165N65S3R0 Datasheet
Additional preview pages of the FCH165N65S3R0 datasheet.

📁 Similar Datasheet

  • FCH165N60E - N-Channel SuperFET II Easy-Drive MOSFET (Fairchild Semiconductor)
  • FCH104N60 - N-Channel MOSFET (Fairchild Semiconductor)
  • FCH104N60 - N-Channel MOSFET (INCHANGE)
  • FCH104N60F - MOSFET (Fairchild Semiconductor)
  • FCH10A03L - Schottky Barrier Diode (Kyocera)
  • FCH10A03L - Schottky Barrier Diode (Nihon Inter Electronics)
  • FCH10A04 - Schottky Barrier Diode (Nihon Inter Electronics)
  • FCH10A045 - Dual Common Cathode Schottky Barrier Rectifier (Thinki Semiconductor)
  • FCH10A06 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)
  • FCH10A06 - Dual Common Cathode Schottky Barrier Rectifier (Thinki Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FCH165N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 140 mW • Ultra Low Gate Charge (Typ. Qg = 39 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
Published: |