FCH22N60N
Description
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
Key Features
- 650 V @ TJ = 150°C
- RDS(on) = 140 mW (Typ.) @ VGS = 10 V, ID = 11 A
- Ultra Low Gate Charge (Typ. Qg = 45 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS pliant
Applications
- Solar Inverter
