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FCH22N60N - N-Channel MOSFET

General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super

junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

resis

Key Features

  • 650 V @ TJ = 150°C.
  • RDS(on) = 140 mW (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Ultra Low Gate Charge (Typ. Qg = 45 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FCH22N60N
Manufacturer onsemi
File Size 391.81 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH22N60N Datasheet

Full PDF Text Transcription for FCH22N60N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FCH22N60N. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – N-Channel, SUPREMOS 600 V, 22 A, 165 mW FCH22N60N Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) tech...

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miconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Features • 650 V @ TJ = 150°C • RDS(on) = 140 mW (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Ou

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