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FCH22N60N - N-Channel MOSFET

Datasheet Summary

Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super

junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

resis

Features

  • 650 V @ TJ = 150°C.
  • RDS(on) = 140 mW (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Ultra Low Gate Charge (Typ. Qg = 45 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FCH22N60N
Manufacturer ON Semiconductor
File Size 391.81 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH22N60N Datasheet
Additional preview pages of the FCH22N60N datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPREMOS 600 V, 22 A, 165 mW FCH22N60N Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Features • 650 V @ TJ = 150°C • RDS(on) = 140 mW (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.
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