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FCH76N60NF - N-Channel MOSFET

Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super

junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

resis

Features

  • RDS(on) = 28.7 mW (Typ. ) @ VGS = 10 V, ID = 38 A.
  • Ultra Low Gate Charge (Typ. Qg = 230 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 896 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FCH76N60NF
Manufacturer ON Semiconductor
File Size 397.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH76N60NF Datasheet
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MOSFET – N-Channel, SUPREMOS, FRFET 600 V, 72.8 A, 38 mW FCH76N60NF Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPREMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • RDS(on) = 28.7 mW (Typ.
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