FCH76N60NF Overview
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter...
FCH76N60NF Key Features
- RDS(on) = 28.7 mW (Typ.) @ VGS = 10 V, ID = 38 A
- Ultra Low Gate Charge (Typ. Qg = 230 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS pliant
