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FCP125N65S3 - N-Channel MOSFET

General Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 105 mW.
  • Ultra Low Gate Charge (Typ. Qg = 46 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 439 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FCP125N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 105 mW • Ultra Low Gate Charge (Typ. Qg = 46 nC) • Low Effective Output Capacitance (Typ. Coss(eff.