FDA50N50 - N-Channel MOSFET

onsemi

General Description

family based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 89 mW (Typ. ) @ VGS = 10 V, ID = 24 A.
Low Gate Charge (Typ. 105 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested.
Improved dv/dt Capability.
These Devices are Pb.
Free and are RoHS Compliant.

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FDA50N50 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDA50N50
Manufacturer	onsemi
File Size	457.39 KB
Description	N-Channel MOSFET
Datasheet	FDA50N50 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, UniFETt 500 V, 48 A, 105 mW FDH50N50, FDA50N50 Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 89 mW (Typ.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 105 nC) • Low Crss (Typ.