FDB045AN08A0 Key Features
- RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- QG(tot) = 92 nC ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
| Manufacturer | Part Number | Description |
|---|---|---|
| FDB045AN08A0 | N-Channel MOSFET |