FDB8896-F085 Datasheet | onsemi

FDB8896-F085 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications - DC/DC converters Features - r DS(ON) = 5.7mΩ, VGS = 10V, ID = 35A - r DS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge - High power and current handling capability - Qualified to AEC Q101 - Ro HS pliant GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 ( Note 3) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad...