FDBL9406-F085T6 Datasheet | onsemi

Features - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - Lowers Switching Noise/EMI - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage +20/- 16 V Continuous Drain TC = 25C Current Rq JC (Note 2) Steady TC = 100C 179.4 PD Power Dissipation Rq JC (Note 2) State TC = 25C 136.4 W TC = 100C 68.2 Continuous Drain Current Rq JA (Notes 1, 2) PD Power Dissipation Rq JA (Notes 1, 2) TA = 25C Steady TA = 100C 31.8 State TA = 25C TA = 100C IDM Pulsed Drain Current TA = 25C, tp = 10 ms 2817 A TJ, Tstg Operating Junction and Storage Temperature Range - 55 to C +175 Source Current (Body Diode) EAS Single Pulse Drain- to- Source Avalanche Energy (IL(pk) = 42.5...