FDC3512
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 3.0 A, 80 V
- RDS(ON) = 77 m W @ VGS = 10 V
- RDS(ON) = 88 m W @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (13 n C Typical)
- High Power and Current Handling Capability
- Fast Switching Speed
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- DC/DC Converter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±20
Drain Current Continuous (Note 1a)
Pulsed
Maximum
(Note 1a)
Power
Dissipation (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150
°C
Stresses exceeding those...
