FDC3512 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC3512 Key Features
- 3.0 A, 80 V
- RDS(ON) = 77 mW @ VGS = 10 V
- RDS(ON) = 88 mW @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (13 nC Typical)
- High Power and Current Handling Capability
- Fast Switching Speed
- This Device is Pb-Free, Halide Free and is RoHS pliant