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FDC3512 - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 3.0 A, 80 V.
  • RDS(ON) = 77 mW @ VGS = 10 V.
  • RDS(ON) = 88 mW @ VGS = 6 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Low Gate Charge (13 nC Typical).
  • High Power and Current Handling Capability.
  • Fast Switching Speed.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDC3512
Manufacturer onsemi
File Size 270.36 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC3512 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 80 V FDC3512 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.