FDC6302P Datasheet | onsemi

FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series. Features -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @...