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FDC6302P Datasheet Dual P-channel MOSFET

Manufacturer: onsemi

Overview: FDC6302P Digital FET, Dual P-Channel General.

General Description

These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize onstate resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications.

Key Features

  • -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VG.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDC6302P Digital FET/ Dual P-Channel Fairchild Semiconductor

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FDC6302P Distributor