FDC6320C Datasheet | onsemi

FDC6320C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors. Features N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6k V Human Body Model Replace NPN & PNP digital transistors. SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16...