FDC6506P Description
Features These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V Low gate charge (2.3nC typical). These devices have been designed to offer exceptional power dissipation in...
FDC6506P Key Features
- 1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V
- Low gate charge (2.3nC typical)