FDD10AN06A0-F085 Key Features
- rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A
- Qg(tot) = 28nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- RoHS pliant
- Part: FDD10AN06A0-F085
- Description: N-Channel Power MOSFET
- Manufacturer: onsemi
- Size: 385.78 KB
Related onsemi Datasheets
| Part Number | Description |
|---|---|
| FDD10AN06A0 | N-Channel MOSFET |
| FDD120AN15A0 | N-Channel MOSFET |
| FDD13AN06A0 | N-Channel MOSFET |
| FDD18N20LZ | 200V 16A N-Channel MOSFET |
| FDD20AN06A0-F085 | N-Channel Power MOSFET |