FDD3680
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
- 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V
- Low Gate Charge (38 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
