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FDD4141-F085BK - -40V -50A P-Channel MOSFET

General Description

This P

proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications.

Key Features

  • Typ RDS(on) = 12.3 mW at VGS =.
  • 10 V, ID =.
  • 12.7 A.
  • Typ RDS(on) = 18.0 mW at VGS =.
  • 4.5 V, ID =.
  • 10.4 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

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MOSFET – P-Channel, POWERTRENCH) -40 V, -50 A, 12.3 mW FDD4141-F085BK General Description This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features  Typ RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A  Typ RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.