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FDD4243-G - P-Channel MOSFET

Download the FDD4243-G datasheet PDF. This datasheet also covers the FDD4243 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P

proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Key Features

  • Max RDS(on) = 44 mW at VGS =.
  • 10 V, ID =.
  • 6.7 A.
  • Max RDS(on) = 64 mW at VGS =.
  • 4.5 V, ID =.
  • 5.5 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDD4243-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FDD4243-G
Manufacturer onsemi
File Size 410.14 KB
Description P-Channel MOSFET
Datasheet download datasheet FDD4243-G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
+ MOSFET – P-Channel, POWERTRENCH) -40 V, -14 A, 44 mW FDD4243, FDD4243-G General Description This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features • Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A • Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A • High Performance Trench Technology for Extremely Low rDS(on) • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted.