FDD6N50TM-F085 Key Features
- 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
- Low gate charge ( typical 12.8 nC)
- Low Crss ( typical 9 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FDD6N50TM-F085
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 972.87 KB
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