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MOSFET – N-Channel, POWERTRENCH)
80 V, 100 A, 4.2 mW
FDD86367
Features
Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Applications
PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems
MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDSS Drain−to−Source Voltage
80
V
VGS Gate−to−Source Voltage
20
V
ID
Drain Current − Continuous (VGS = 10)
100
A
(Note 1)
TC = 25C
Pulsed Drain Current
TC = 25C See Figure 4
EAS Single Pulse Avalanche Energy (Note 2)
82
mJ
PD Power Dissipation Derate Above 25C
227
W
1.
FDD86367 Datasheet
