Datasheet Details
| Part number | FDD8896 |
|---|---|
| Manufacturer | onsemi |
| File Size | 292.21 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FDD8896 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
DC/DC converters FeaKey Features
- rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
- rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
- High performance trench technology for extremely low rDS(ON).
- Low gate charge.
- High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Conti.