FDFS2P106A Datasheet | onsemi

Integrated 60V P-Channel Power Trench MOSFET and Schottky Diode General Description The FDFS2P106A bines the exceptional performance of ON Semiconductor's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features - - 3.0 A, - 60V RDS(ON) = 110 mΩ @ VGS = - 10 V RDS(ON) = 140 mΩ @ VGS = - 4.5 V - VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility SO-8 Pin 1 A1 A2 S3...