Datasheet Details
| Part number | FDFS2P106A |
|---|---|
| Manufacturer | onsemi |
| File Size | 179.19 KB |
| Description | P-Channel MOSFET and Schottky Diode |
| Datasheet |
 FDFS2P106A Datasheet
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General Description
The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
Key Features
- a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
- 3.0 A,.
- 60V RDS(ON) = 110 mΩ @ VGS =.
- 10 V RDS(ON) = 140 mΩ @ VGS =.
- 4.5 V.
- VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A.
- Schottky and MOSFET incorporated into single power surface mount SO-8 package.
- Electrically indepen.