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FDFS2P106A Datasheet

Manufacturer: onsemi
FDFS2P106A datasheet preview

Datasheet Details

Part number FDFS2P106A
Datasheet FDFS2P106A-ONSemiconductor.pdf
File Size 179.19 KB
Manufacturer onsemi
Description P-Channel MOSFET and Schottky Diode
FDFS2P106A page 2 FDFS2P106A page 3

FDFS2P106A Overview

The FDFS2P106A bines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters.

FDFS2P106A Key Features

  • 3.0 A, -60V RDS(ON) = 110 mΩ @ VGS = -10 V RDS(ON) = 140 mΩ @ VGS = -4.5 V
  • VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package
  • Electrically independent Schottky and MOSFET pinout for design flexibility

FDFS2P106A from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor
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