FDG313N Datasheet Text
FDG313N
FDG313N
Digital FET, N-Channel
General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Applications
- Load switch
- Battery protection
- Power management
Features
- 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V
RDS(on) = 0.60 Ω @ VGS = 2.7 V.
- Low gate charge (1.64 nC typical)
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
- Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
- pact industry standard SC70-6 surface mount package.
S
D
1
D
2
G pin 1
SC70-6
D...
