Datasheet Summary
Dual N-Channel, Digital FET
Features
- 25 V, 0.22 A Continuous, 0.65 A Peak
- RDS(ON) = 4 Ω @ VGS = 4.5 V,
- RDS(ON) = 5 Ω @ VGS = 2.7 V.
- Very Low Level Gate Drive Requirements allowing Directop-
Eration in 3 V Circuits (VGS(th) < 1.5 V)
- Gate- Source Zener for ESD Ruggedness ( >6 kV Human Body
Model)
- pact Industry Standard SC70- 6 Surface Mount Package.
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Low Voltage Applications as a Replacement for Bipolar Digital
Transistors and Small Signal MOSFETs
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings...