Datasheet4U Logo Datasheet4U.com

FDG6317NZ - Dual N-Channel MOSFET

General Description

synchronous or conventional switching PWM controllers.

Key Features

  • 0.7 A, 20 V  RDS(ON) = 400 mW @ VGS = 4.5 V  RDS(ON) = 550 mW @ VGS = 2.5 V.
  • Gate-Source Zener for ESD Ruggedness. HBM Class 1C.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Compact Industry Standard SC70-6 Surface Mount Package.
  • These Devices are Pb-Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDG6317NZ
Manufacturer onsemi
File Size 245.78 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDG6317NZ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW FDG6317NZ General Description This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely Iow RDS(ON) and gate charge (QG) in a small package. Features  0.7 A, 20 V  RDS(ON) = 400 mW @ VGS = 4.5 V  RDS(ON) = 550 mW @ VGS = 2.5 V  Gate-Source Zener for ESD Ruggedness.