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FDH047AN08A0 - N-Channel MOSFET

Key Features

  • RDS(ON) = 4.0 mW (Typ. ), VGS = 10 V, ID = 80 A.
  • Qg(TOT) = 92 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 75 V, 80 A, 4.7 mW FDH047AN08A0, FDP047AN08A0 Features  RDS(ON) = 4.0 mW (Typ.), VGS = 10 V, ID = 80 A  Qg(TOT) = 92 nC (Typ.), VGS = 10 V  Low Miller Charge  Low Qrr Body Diode  UIS Capability (Single Pulse and Repetitive Pulse)  This Device is Pb−Free and is RoHS Compliant Applications  Synchronous Rectification for ATX / Server / Telecom PSU  Battery Protection Circuit  Motor Drives and Uninterruptible Power Supplies DATA SHEET www.onsemi.com VDSS 75 V RDS(ON) MAX 4.