FDH055N15A Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDH055N15A Key Features
- RDS(on) = 4.8 mW (Typ.) @ VGS = 10 V, ID = 120 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free and is RoHS pliant