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FDH210N08 - N-Channel MOSFET

General Description

MOSFET family based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(ON) = 4.65 mW (Typ. ), VGS = 10 V, ID = 125 A.
  • Low Gate Charge (Typ. 232 nC).
  • Low Crss (Typ. 262 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDH210N08
Manufacturer onsemi
File Size 386.39 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH210N08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETt 75 V, 210 A, 5.5 mW FDH210N08 Description UniFET t MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(ON) = 4.65 mW (Typ.), VGS = 10 V, ID = 125 A • Low Gate Charge (Typ. 232 nC) • Low Crss (Typ.