FDI150N10 - 100V 57A N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

RDS(on) = 12 mW (Typ. ) @ VGS = 10 V, ID = 49 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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FDI150N10 100v 57a n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDI150N10
Manufacturer	onsemi
File Size	327.41 KB
Description	100V 57A N-Channel MOSFET
Datasheet	FDI150N10 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 12 mW (Typ.