FDI150N10 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDI150N10 Key Features
- RDS(on) = 12 mW (Typ.) @ VGS = 10 V, ID = 49 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
FDI150N10 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit