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FDMA1032CZ - Dual-Channel MOSFET

General Description

This device is designed specifically as a single package solution for a DC/DC “Switching” MOSFET in cellular handset and other ultra

portable applications.

Key Features

  • an independent N.
  • Channel & P.
  • Channel MOSFET with low on.
  • state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching.

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Datasheet Details

Part number FDMA1032CZ
Manufacturer onsemi
File Size 234.90 KB
Description Dual-Channel MOSFET
Datasheet download datasheet FDMA1032CZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – POWERTRENCH), 20 V Complementary N-Channel: 20 V, 3.7 A, 68 mW P-Channel: -20 V, -3.1 A, 95 mW FDMA1032CZ General Description This device is designed specifically as a single package solution for a DC/DC “Switching” MOSFET in cellular handset and other ultra−portable applications. It features an independent N−Channel & P−Channel MOSFET with low on−state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. Features Q1: N−Channel • RDS(on) = 68 mW at VGS = 4.5 V • RDS(on) = 86 mW at VGS = 2.5 V Q2: P−Channel • RDS(on) = 95 mW at VGS = −4.