FDMA1032CZ
Overview
This device is designed specifically as a single package solution for a DC/DC “Switching” MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses.
- RDS(on) = 68 mW at VGS = 4.5 V
- RDS(on) = 86 mW at VGS = 2.5 V Q2: P-Channel
- RDS(on) = 95 mW at VGS = -4.5 V
- RDS(on) = 141 mW at VGS = -2.5 V
- Low Profile - 0.8 mm Maximum - In the New Package MicroFET 2x2 mm
- HBM ESD Protection Level > 2 kV (Note 3)
- Free from Halogenated Compounds and Antimony Oxides
- This Device is Pb-Free, Halide Free and is RoHS Compliant
