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FDMA3027PZ-F130 - Dual P-Channel MOSFET

Download the FDMA3027PZ-F130 datasheet PDF. This datasheet also covers the FDMA3027PZ variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

dual switching requirements such as gate driver for larger Mosfets.

Key Features

  • two independent P.
  • Channel MOSFETs with low on.
  • state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMA3027PZ-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

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FDMA3027PZ Dual P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Dual P-Channel POWERTRENCH) -30 V, -3.3 A, 87 mW FDMA3027PZ, FDMA3027PZ-F130 Description This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G−S zener has been added to enhance ESD voltage level. Features • Max RDS(on) = 87 mW at VGS = −10 V, ID = −3.3 A • Max RDS(on) = 152 mW at VGS = −4.5 V, ID = −2.3 A • HBM ESD Protection Level > 2 kV Typical (Note 3) • Low Profile − 0.