FDMA3027PZ-F130 Datasheet | onsemi

Description This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P- Channel MOSFETs with low on- state resistance for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G- S zener has been added to enhance ESD voltage level. Features - Max RDS(on) = 87 m W at VGS = - 10 V, ID = - 3.3 A - Max RDS(on) = 152 m W at VGS = - 4.5 V, ID = - 2.3 A - HBM ESD Protection Level > 2 k V Typical (Note 3) - Low Profile - 0.8 mm Maximum - in the New Package Micro FET 2x2 mm - These Devices are Pb- Free and are Ro HS pliant Typical Applications - Load Switch - Discrete Gate Driver MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage - 30 VGS Gate to Source Voltage ±25 Drain Current - Continuous (Note 1a) - 3.3 - Pulsed - 15 Power Dissipation (Note...