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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH)
-20 V, -7.8 A, 24 mW
FDMA507PZ
VS1S2 −20 V
rS1S2(on) MAX 24 mW @ −5 V 25 mW @ −4.5 V 35 mW @ −2.5 V 45 mW @ −1.8 V
IS1S2 MAX −7.8 A
General Description This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−stade resistance.
The MicroFET t 2x2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.
Features
• Max rDS(on) = 24 mW at VGS = −5 V, ID = −7.8 A • Max rDS(on) = 25 mW at VGS = −4.5 V, ID = −7 A • Max rDS(on) = 35 mW at VGS = −2.5 V, ID = −5.5 A • Max rDS(on) = 45 mW at VGS = −1.8 V, ID = −4 A • Low Profile − 0.
FDMA507PZ Datasheet
