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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH)
-20 V, -7.8 A, 30 mW
FDMA510PZ
General Description This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance.
The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• Max RDS(on) = 30 mW at VGS = −4.5 V, ID = −7.8 A • Max RDS(on) = 37 mW at VGS = −2.5 V, ID = −6.6 A • Max RDS(on) = 50 mW at VGS = −1.8 V, ID = −5.5 A • Max RDS(on) = 90 mW at VGS = −1.5 V, ID = −2.0 A • Low Profile − 0.
FDMA510PZ Datasheet
