FDMA510PZ
Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
Key Features
- Max RDS(on) = 30 mW at VGS = -4.5 V, ID = -7.8 A
- Max RDS(on) = 37 mW at VGS = -2.5 V, ID = -6.6 A
- Max RDS(on) = 50 mW at VGS = -1.8 V, ID = -5.5 A
- Max RDS(on) = 90 mW at VGS = -1.5 V, ID = -2.0 A
- 0.8 mm Maximum in the New Package MicroFET 2x2 mm
- HBM ESD Protection Level > 3 kV Typical (Note
- Free from Halogenated pounds and Antimony Oxides
- Continuous (Note 1a)
