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FDMA6676PZ - P-Channel MOSFET

Description

This device is an ultra low resistance P

Channel FET.

for power line load switching applications and reverse polarity protection.

It is especially optimized for voltage rails that can climb as high as 25 V.

Features

  • Max rDS(on) = 13.5 mW @ VGS =.
  • 10 V.
  • 25 V VGS Extended Operating Rating.
  • 30 V VDS Blocking.
  • 2 x 2 mm Form Factor.
  • Low Profile.
  • 0.8 mm Maximum.
  • Integrated Protection Diode.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant www. onsemi. com Pin 1 D D G Drain Source D DS WDFN6 CASE 483AV.

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Datasheet preview – FDMA6676PZ

Datasheet Details

Part number FDMA6676PZ
Manufacturer ON Semiconductor
File Size 394.45 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMA6676PZ Datasheet
Additional preview pages of the FDMA6676PZ datasheet.

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Full PDF Text Transcription

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MOSFET – Single, P-Channel, POWERTRENCH) -30 V, -11 A, 13.5 mW FDMA6676PZ Description This device is an ultra low resistance P−Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25 V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25 V specifically designed to simplify installation.
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