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MOSFET – Single, P-Channel, POWERTRENCH)
-12 V, -12 A, 12.5 mW
FDMA908PZ
General Description This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• Max RDS(on) = 12.5 mW at VGS = −4.5 V, ID = −12 A • Max RDS(on) = 18 mW at VGS = −2.5 V, ID = −10 A • Max RDS(on) = 28 mW at VGS = −1.8 V, ID = −8 A • Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 2.
FDMA908PZ Datasheet
