Datasheet4U Logo Datasheet4U.com

FDMC0310AS - N-Channel MOSFET

General Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC0310AS MOSFET Fairchild Semiconductor
FDMC15N06 N-Channel MOSFET Fairchild Semiconductor
FDMC2512SDC N-Channel MOSFET Fairchild Semiconductor
FDMC2514SDC N-Channel Dual Cool PowerTrench SyncFET Fairchild Semiconductor
FDMC2514SDC N-Channel MOSFET VBsemi

Other Datasheets by onsemi

Part Number Description
FDMC0310AS-F127 N-Channel MOSFET
FDMC007N08LC N-Channel MOSFET
FDMC007N08LCDC 80V 64A N-Channel MOSFET
FDMC007N30D Dual N-Channel MOSFET
FDMC008N08C N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Features • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.