FDMC3020DC Description
Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS pliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest...
FDMC3020DC Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A
- High performance technology for extremely low rDS(on)
- RoHS pliant