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FDMC3020DC - N-Channel MOSFET

Key Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A.
  • High performance technology for extremely low rDS(on).
  • RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching per.

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Full PDF Text Transcription (Reference)

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FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET FDMC3020DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 40 A, 6.25 mΩ General Description Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.