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FDMC6890NZ - Dual N-Channel MOSFET

General Description

converters with excellent thermal and switching characteristics.

Key Features

  • two N.
  • channel MOSFETs with low on.
  • state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Features.
  • Q1: N.
  • Channel.
  • Max RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 4 A.
  • Max RDS(on) = 100 mΩ at VGS = 2.5 V, ID = 3 A.
  • Q2: N.
  • Channel.
  • Max RDS(on) = 100 mΩ at VGS = 4.5 V, ID = 4 A.
  • Max RDS(on) = 150 mΩ at VGS.

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Datasheet Details

Part number FDMC6890NZ
Manufacturer onsemi
File Size 356.96 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMC6890NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH) 20 V, 4 A, Q1: 68 mW, Q2: 100 mW FDMC6890NZ General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N−channel MOSFETs with low on−state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Features • Q1: N−Channel ♦ Max RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 4 A ♦ Max RDS(on) = 100 mΩ at VGS = 2.5 V, ID = 3 A • Q2: N−Channel ♦ Max RDS(on) = 100 mΩ at VGS = 4.5 V, ID = 4 A ♦ Max RDS(on) = 150 mΩ at VGS = 2.