Description
converters with excellent thermal and switching characteristics.
Features
- two N.
- channel MOSFETs with low on.
- state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Features.
- Q1: N.
- Channel.
- Max RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 4 A.
- Max RDS(on) = 100 mΩ at VGS = 2.5 V, ID = 3 A.
- Q2: N.
- Channel.
- Max RDS(on) = 100 mΩ at VGS = 4.5 V, ID = 4 A.
- Max RDS(on) = 150 mΩ at VGS.