FDMC86244 Description
This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86244 Key Features
- Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
- Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant